IRF630N Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

IRF620N
IRF630NS
IRF630N/NS/NL
Power MOSFET
V_{DSS =} 200V, R_DS(on) = 0.30 ohm, I_D = 9.3 A
IRF630NL
D
G
S
Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(BR)DSS V_GS = 0 V_DC, I_D = 250µA
IDSS ^{VDS = 200VDC, VGS = 0VDC}
VDS = 160VDC, VGS = 0VDC Tj=150 C
IGSS ^{VGS = +20VDC}
VGS = -20VDC
VGS(th) VDS = VGS, ID = 250µA
Value
Min Typ
200
-
--
--
--
--
2.0
-
Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 5.4A
--
Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn On Delay Time
Turn Off Delay Time
Rise Time
Fall Time
Continuous Source Current
Pulsed Source Current
Forward Voltage (Diode)
QG
QGS
QGD
ID = 5.4A
VDS = 160VDC,
VGS = 10VDC
CISS
COSS VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ
CRSS
td_(on)
td_(off) V_DD = 100V_DC, I_D = 4.8A, R_G =18
tr
RD = 20
tf
IS
ISM
VSD VGS = 0VDC, IS =5.4A, Tp = 300µS
--
--
--
-
575
-
89
-
25
-
7.9
-
27
-
14
-
15
--
--
--
Max ^Unit
- Volt
25
250 µA
100 nA
-100 nA
4.0 Volt
0.30
35 nC
6.5 nC
17 nC
- pF
- ^pF
- pF
- nS
- ^nS
- nS
- nS
9.3 A
37
A
1.3 V
MAXIMUM RATINGS (Tj = 25 C unless stated otherwise)
Parameter
Symbol Condition
Value
Gate to Source Voltage
VGS
+/- 20V
Drain to Source
VDSS
200
Voltage
Continuous Drain Current
ID
9.3
Pulsed Drain Current
IDM
37
Total Power Dissapation
PD (TA = 25 C)
Thermal Resistance
(Junction to Ambient)
RTH (J-A)
Maximum Operating Temperature Range (Tj)
82
62
-55 to +175 C
Unit
Volt
Volt
Amp
Amp
W
C/W
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