DAP222 Datasheet, PDF (1/1 Pages) Motorola, Inc – SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT

Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diode
DAP222 SWITCHING DIODE
FEATURES:
Power dissipation
P_D:
150 mW (Tamb=25℃)
Collector current
I_F:
100 mA
Collector-base voltage
V_R:
80 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
CIRCUIT:
SOT-523
1
3
2
MARKING: P
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=70V
MIN
MAX
80
0.1
Forward voltage
VF
IF=100mA
1.2
Diode capacitance
Reverse recovery time
CD
VR=6V, f=1MHz
3.5
trr
VR=6V, IF=5mA
4
UNIT
V
µA
V
pF
ns