DAN202U Datasheet, PDF (1/1 Pages) Rohm – Switching diode

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Diode
DAN202U SWITCHING DIODE
FEATURES:
Power dissipation
P_D:
200 mW (Tamb=25℃)
Collector current
I_F:
100 mA
Collector-base voltage
V_R:
80 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
CIRCUIT:
SOT-323
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
1
3
2
MARKING: N
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=70V
MIN
MAX
80
0.1
Forward voltage
VF
IF=100mA
1.2
Diode capacitance
Reverse recovery time
CD
VR=6V, f=1MHz
3.5
trr
VR=6V, IF=5mA
4
UNIT
V
µA
V
pF
ns