BF821 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistors

Transys
Electronics
LIMITED
SOT-23 Formed SMD Package
BF821
BF823
SILICON EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BF821 = 1W
BF823 = 1Y
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector–emitter voltage (R_BE = 2,7 kW )
Collector current (peak value)
Total power dissipation up to T_amb = 25 °C
Junction temperature
D.C. current gain
–I_C = 25 mA; –V_CE = 20 V
Feedback capacitance at f = 1 MHz
· I_C = 0; –V_CE = 30 V
Transition frequency at f = 35 MHz
–I_C = 10 mA; –V_CE = 10 V
BF821
–V_CB0 max. 300
–V_CE0 max. —
–V_CER max. 300
–I_CM max.
P_tot max.
T_j
max.
BF823
250 V
250 V
–V
100
mA
250
mW
150
°C
h_FE >
50
C_re
<
1,6
pF
f_T
>
60
MHz