BF820 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistors

Transys
Electronics
LIMITED
SOT-23 Formed SMD Package
BF820
BF822
SILICON EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
BF820 = 1V
BF822 = 1X
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector–emitter voltage (R_BE = 2,7 kW )
Collector current (peak value)
Total power dissipation up to T_amb = 25 °C
Junction temperature
D.C. current gain
I_C = 25 mA; V_CE = 20 V
Feedback capacitance at f = 1 MHz
I_C = 0; V_CE = 30 V
Transition frequency at f = 35 MHz
I_C = 10mA; V_CE = 10 V
V_CB0
V_CE0
V_CER
I_CM
P_tot
T_j
BF820
max. 300
max. –
max. 300
max.
max.
max.
BF822
250 V
250 V
—V
100
mA
250
mW
150
°C
h_FE >
50
C_re
<
1,6
pF
f_T
>
60
MHz