BF422 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER,COLOR TV CHROMA OUTPUT)

Transys
Electronics
LIMITED
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BF422
(BPL)
TO-92
BCE
Designed for High Voltage Video Amplifier in Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
250
Collector -Emitter Voltage
VCEO
250
Emitter -Base Voltage
VEBO
5.0
Collector Current Continuous
IC
500
Power Dissipation@ Ta=25 deg C
PD
900
Derate Above 25 deg C
7.2
Power Dissipation@ Tc=25 deg C
PD
2.75
Derate Above 25 deg C
22
Operating & Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
THERMAL RESISTANCE
From Junction to Case
Rth(j-c)
45
From Junction to Ambient
Rth(j-a)
156
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
min
max
Collector -Emitter Voltage
VCEO IC=1.0mA,IB=0
250
-
Collector -Base Voltage
VCBO
IC=100uA.IE=0
250
-
Emitter-Base Voltage
VEBO
IE=100uA, IC=0
5.0
-
Collector-Cut off Current
ICBO
VCB=200V, IE=0
-
10
Emitter-Cut off Current
IEBO
VEB=5.0V,IC=0
100
Base Emitter (Sat) Voltage
VBE(Sat)* IC=20mA,IB=2mA
-
2
Collector Emitter (Sat) Voltage
VCE(Sat) * IC=20mA, IB=2mA
-
0.5
DC Current Gain
hFE*
IC=25mA, VCE=20V
60
120
DYNAMIC CHARACTERISTICS
Transistors Frequency
ft
IC=10mA,VCE=10V
60
-
f=50MHz
Feedback Capacitance
Cre
VCB=30V, f=1MHz
-
1.6
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
UNITS
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
deg C/W
deg C/W
UNITS
V
V
V
nA
nA
V
V
MHz
pF