BF370R Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTOR

Transys
Electronics
LIMITED
NPN SILICON PLANAR TRANSISTOR
BF370R
TO-92
BEC
Low Level Amplifier Transistor.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
VALUE
Collector -Base Voltage
VCBO
40
Collector -Emitter Voltage
VCEO
15
Emitter Base Voltage
VEBO
4.5
Collector Current (Continuous)
IC
100
Power Dissipation @ Ta=25 deg C
PD
500
Derate Above 25 deg C
4.0
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
Lead Temperature for Soldering 1/16" TL
260
from Body for 10 Seconds.
Thermal Resistance
Junction to Case
Rth (j-c)
83.3
Junction to Ambient
Rth (j-a)
200
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector -Base Voltage
VCBO IC=100uA, IE=0
Collector -Emitter Voltage
VCEO IC=100uA, IB=0
Emitter Base Voltage
VEBO
IE=100uA, IC=0
Collector Cut off Current
ICBO
VCB=20V, IE=0
Ta=125 deg C
VCB=15V, IE=0
Emitter Cut off Current
IEBO
VEB=2V, IC=0
DC Current Gain
hFE
IC=10mA,VCE=1V
DYNAMIC CHARACTERISTICS
Transistors frequency
ft
IC=10mA,VCE=10V
IC=40mA,VCE=10V
Collector Capacitance
Cc
VCB=10V, IE=0, f=1MHz
Emitter Capacitance
Ce
VEB=1V, IC= Ic=0, f=1MHz
Feedback Capacitance
Cre
IC=0, VCE=10V, f=1MHz
Interference Voltage for K=1%
GV
V(int) RMS
MIN TYP
40
-
15
-
4.5
-
-
-
-
-
-
-
40
-
500
-
490
Typ 2.2
-
-
Typ 1.6
Typ 120
UNIT
V
V
V
mA
mW
mW/deg C
deg C
deg C
deg C/W
deg C/W
MAX
-
-
-
400
UNIT
V
V
V
nA
30
uA
100
nA
-
-
MHz
-
MHz
pF
4.5
pF
pF
mV