BD707 Datasheet, PDF (1/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

Transys
Electronics
LIMITED
NPN SILICON PLANAR POWER TRANSISTOR
BD707
TO-220
Plastic Package
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation @ T_c <25 ºC
Operating & Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CER
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
T_j, T_stg
VALUE
60
60
60
5
12
18
5
75
- 65 to +150
UNIT
V
V
V
V
A
A
W
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
R_{th (j-c)}
R_{th (j-a)}
1.67
ºC/W
70
ºC/W
ELECTRICAL CHARACTERISTICS (T_c=25ºC Unless Specified Otherwise)
DESCRIPTION
Collector Cut off Current
SYMBOL
I_CBO
TEST CONDITION
V_CB=60V, I_E=O
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Knee Voltage
Base Emitter on Voltage
DC Current Gain
Transition frequency
I_CEO
I_EBO
V_CEO(sus) *
V_CE(sat)*
V_CEK *
V_{BE(on) *}
h_FE *
f_T
T_c=150 ºC
V_CB=60V, I_E=O
V_CE=30V, I_B=0
V_EB=5V, I_C=0
I_C=100mA, I_B=0
I_C=4A, I_B=0.4A
I_C=3A, I_B= **
I_C=4A, V_CE=4V
I_C=0.5A, V_CE=2V
I_C=2A, V_CE=2V
I_C=4A, V_CE=4V
I_C=10A, V_CE=4V
I_C=300mA, V_CE=3V
*Pulsed : Pulse duration =300µs, duty cycle1.5%
**Value for which I_C=3.3A @ V_CE=2V
MIN TYP MAX UNIT
100
µA
1.0 mA
100 mA
1.0 mA
60
V
1.0
V
0.4
V
1.5
V
40
400
30
15
150
5
3
MHz