BD675 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium-Power Silicon NPN Darlingtons

Transys
Electronics
LIMITED
NPN DARLINGTON POWER SILICON TRANSISTOR
BD 675
(BPL)
TO-126
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
45
Collector -Emitter Voltage
VCEO
45
Emitter Base Voltage
VEBO
5.0
Collector Current
IC
4.0
Base Current
IB
0.1
Power Dissipation @ Tc=25 deg C PD
40
Derate Above 25 deg C
0.32
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
Thermal Resistance
Junction to Case
Rth(j-c)
3.13
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter (sus) Voltage
VCEO(sus)* IC=50mA, IB=0
Collector Cut off Current
ICEO
VCE=23V, IB=0
ICBO
VCB=45V, IE=0
Emitter Cut off Current
IEBO
DC Current Gain
hFE*
Collector Emitter Saturation Voltage VCE(Sat)*
Base Emitter on Voltage
VBE(on)*
Gain Bandwidth Product
ft
Pulse Test:-Pulse Width=300us, Duty Cycle=2%
Tc=100 deg C
VCB=45V, IE=0
VBE=5V,IC=0
IC=500mA, VCE=5V
IC=1.5A, IB=30mA
IC=1.5A, VCE=3V
IC=50mA, VCE=10V,
UNIT
V
V
V
A
A
W
W/deg C
deg C
deg C
deg C/W
MIN TYP MAX
45 -
-
-
- 500
-
- 0.2
UNIT
V
uA
mA
-
- 2.0
-
- 2.0
800 - 3200
-
- 2.5
-
- 2.5
260
-
mA
mA
V
V
MHz