BD435 Datasheet, PDF (1/1 Pages) ON Semiconductor – Plastic Medium Power Silicon NPN Transistor

Transys
Electronics
LIMITED
TO-126 Plastic-Encapsulated Transistors
BD433/435/437 TRANSISTOR (NPN)
FEATURES
Power dissipation
TO-126
P_CM:
1.25 W (Tamb=25℃)
1. EMITTER
Collector current
I_CM:
Collector-base voltage
4A
2. COLLECTOR
3. BASE
123
V_(BR)CBO:
BD433 22 V
BD435 32 V
BD437 45 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
BD433 22
V(BR)CBO Ic=100µA, I_E=0
BD435 32
BD437 45
BD433 22
V(BR)CEO Ic=100mA, I_B=0
BD435 32
BD437 45
V(BR)EBO
IE=100µA, IC=0
5
VCB=22V, IE=0
ICBO
VCB=32V, IE=0
BD433
BD435
VCB=45V, IE=0
BD437
VCE=22V, IE=0
BD433
ICEO
VCE=32V, IE=0
BD435
VCE=45V, IE=0
BD437
IEBO
VEB=5V, IE=0
hFE(1)
VCE=1V, IC=500mA
85
hFE(2)
VCE=5V, IC=10mA BD433/BD435
40
BD437
30
hFE(3)
VCE=1V, IC=2A
BD433/BD435
50
BD437
40
VCE(sat) ^{IC=2A, IB=0.2A}
BD433/BD435
BD437
VBE
VCE=1V, IC=2A
BD433/BD435
BD437
Transition frequency
fT
VCE=1V, IC=250mA
3
MAX
1
10
1
0.5
0.6
1.1
1.2
UNIT
V
V
V
µA
µA
µA
V
V
MHz