BD433 Datasheet, PDF (1/3 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

Transys
Electronics
LIMITED
EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
TO126
Plastic Package
Intended for use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CES
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current
I_C
Collector Peak Current (t=10ms_ I_CM
Base Current
I_B
Total Dissipation @ T_C=25ºC
P_D
Total Dissipation @ T_a=25ºC
P_D
Derate above 25ºC
Operating and Storage
Junction Temperature Range
T_j, T_stg
BD433
BD434
22
22
22
BD435
BD436
32
32
32
BD437
BD438
45
45
45
5.0
4.0
7.0
1.0
36.0
1.25
10
BD439
BD440
60
60
60
- 65 to 150
BD441
BD442
80
80
80
UNIT
V
V
V
V
A
A
A
W
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
R_{th (j-c)}
3.5
Junction to Ambient in free air R_{th (j-a)}
100
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441
Collector Cut off Current
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Sustaining
Voltage
BD434 BD436 BD438 BD440 BD442
I_CBO
V_CB=Rated V_CBO, I_E=0 _{<100 <100 <100 <100 <100}
I_CES V_BE=0, V_CE=Rated V_CES <100 <100 <100 <100 <100
I_EBO
V_EB=5V_, I_C=0
<1.0 <1.0 <1.0 <1.0 <1.0
*V_{CEO (sus)}
I_C=100mA, I_B=0
>22 >32 >45 >60 >80
Collector Emitter Saturation
Voltage
*V_{CE (sat)}
I_C=2.0A, I_B=0.2A
<0.5 <0.5 <0.6 <0.8 <0.8
Base Emitter On Voltage
*V_{BE (on)} I_C=10mA, V_CE=5V ALL
typ 0.58
I_C=2.0A, V_CE=1V
<1.1 <1.1 <1.2 <1.5
<1.5
UNIT
µA
µA
mA
V
V
V
V