BD138 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-126 Plastic-Encapsulated Transistors
BD136/BD138/BD140 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
1.25 W (Tamb=25℃)
Collector current
I_CM:
-1.5 A
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
BD136
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA, IE=0
BD138
BD140
BD136
Collector-emitter breakdown voltage V(BR)CEO
Ic=-30mA, IB=0
BD138
BD140
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
V(BR)EBO
IE=-100µA, IC=0
ICBO
VCB=-30V, IE=0
IEBO
VEB=-5V, IC=0
hFE(1)
VCE=-2V, IC=-5Ma
hFE(2) V_CE=-2V, I_C=-150mA
BD136
BD138
BD140
hFE(3)
VCE=-2V, IC=-500mA
VCE(sat)
IC=-500mA, IB=-50mA
VBE
VCE=-2V, IC=-500mA
MIN TYP MAX UNIT
-45
-60
V
-80
-45
-60
V
-80
-5
V
-0.1 µA
-10 µA
25
40
250
40
160
25
-0.5 V
-1
V
CLASSIFICATION OF h_FE(2)
Rank
Range
6
40-100
10
63-160
16
100-250