BD135 Datasheet, PDF (1/1 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

Transys
Electronics
LIMITED
TO-126 Plastic-Encapsulated Transistors
BD135/BD137/BD139 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1.25 W (Tamb=25℃)
Collector current
I_CM:
1.5 A
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
BD135
45
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
BD137
60
BD139
80
BD135
45
Collector-emitter breakdown voltage V(BR)CEO
Ic=30mA, IB=0
BD137
60
BD139
80
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)EBO
IE=100µA, IC=0
5
ICBO
VCB=30V, IE=0
IEBO
VEB=5V, IC=0
hFE(1)
VCE=2V, IC=5mA
25
BD135
40
hFE(2) V_CE=2V, I_C=150mA
BD137/BD139 40
hFE(3)
VCE=2V, IC=500mA
25
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=50mA
Base-emitter voltage
VBE
VCE=2V, IC=500mA
TYP
MAX UNIT
V
V
V
0.1 µA
10 µA
250
160
0.5 V
1
V
CLASSIFICATION OF h_FE(2)
Rank
Range
6
40-100
10
63-160
16
100-250