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| BD115 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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Transys
Electronics
LIMITED
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BD115
TO-39
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage (RBE<1Kâ¦
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Power Dissipation @ Ta=50ºC
Storage Temperature
SYMBOL
VCEO
VCER
VCBO
VEBO
IC
ICM
PD
Tj, Tstg
VALUE
180
245
245
5
150
200
6
-55 to +200
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
25
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Breakdown Voltage
Collector Base Breakdown Current
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain
DYNAMIC CHARACTERISTICS
BVCEO IC=1mA,IB=0
180
BVCBO IC=100µA, IE=0
245
BVEBO IE=100µA, Ic=0
5
ICBO
VCB=200V, IE=0
VCB=200V,IE=0,Tj=200ºC
IEBO
VEB=5V, IC=0
VCE(Sat) * IC=100mA,IB=10mA
VBE(on) * IC=50mA,VCE=100V
hFE
IC=50mA,VCE=100V
22
Transition Frequency
Collector Base Time Constant
fT
rb'Cc
Feedback Capacitance
Cre
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
IC=30mA, VCE=100V
f=20MHz
IE=10mA, VCB=10V,
f=10MHz
VCE=20V, IC=10mA,
f=1.0MHz
VALUE
TYP MAX
15
550
100
3.5
1.0
60
145
30
100
3.5
UNITS
V
V
V
V
mA
mA
W
ºC
ºC/W
UNITS
V
V
V
nA
µA
µA
V
V
MHz
ps
pF
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