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| BAW56LT1 Datasheet, PDF (1/1 Pages) Motorola, Inc – Monolithic Dual Switching Diode Common Anode | |||
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Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulate Diodes
BAW56LT1 SWITCHING DIODE
FEATURES
Power dissipation
PD:
225 mW (Tamb=25â)
Forward Current
IF:
Reverse Voltage
200 m A
VR:
70 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-23
2. 4
1. 3
Unit: mm
Mar ki ng A1
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=70V
MIN
MAX
70
2.5
UNIT
V
µA
Forward voltage
Diode capacitance
Reverse recovery time
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD
VR=0V, f=1MHz
t rr
715
855
mV
1000
1250
2
pF
6
nS
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