BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

Transys
Electronics
LIMITED
SOT-23 Formed SMD Package
BAV99
SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES
Silicon planar high-speed switching series diode pair
Marking
BAV99 = A7
Pin configuration
1 = ANODE
2 = CATHODE
3 = CATHODE/ANODE
2
1
3
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
ABSOLUTE MAXIMUM RATINGS
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
Forward voltage at I_F = 50 mA
Reverse recovery time when switched from
I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω;
measured at I_R = 1 mA
Recovery charge when switched from
I_F = 10 mA to V_R = 5 V; R_L = 100 Ω
V_R
V_RRM
I_FRM
T_j
V_F
max.
max.
max.
max.
<
75 V
85 V
450 mA
150 °C
1,0 V
t_rr
<
Q_s
<
4 ns
45 pC
RATINGS (per diode) (at T_A = 25°C unless otherwise specified)
Limiting values
Continuous reverse voltage
Repetitive peak reverse voltage
V_R
V_RRM
max.
max.
75 V
85 V