BAV74 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

Transys
Electronics
LIMITED
SILICON PLANAR DUAL SWITCHING DIODE.
3
Pin Configuration
1 = ANODE
2 = ANODE
3 = CATHODE
1
2
BAV74
SOT-23
Formed SMD Package
Marking
BAV74 - A5
High-Speed Switching Dual Diodes, Common Cathode
ABSOLUTE MAXIMUM RATINGS (Rating Per Diode)
DESCRIPTION
SYMBOL
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
V_RRM
V_R
Forward Current (DC)
*I_F
Single Diode Loaded
Double Diode Loaded
Repetitive Peak Forward Current
I_FRM
Non Repetitive Peak Forward Current
t=1 µs
I_FSM
t=1ms
t=1s
Power Dissipation up to T_a=25ºC
*P_D
Storage Temperature
T_stg
Junction Temperature
T_j
VALUE
60
50
215
125
450
4.0
1.0
0.5
250
- 55 to +150
150
THERMAL RESISTANCE
Junction to tie-point
R_{th (j-tp)}
360
Junction to Ambient in free air
*R_{th (j-a)}
500
*Mounted on an FR4 printed circuit board
ELECTRICAL CHARACTERISTICS
DESCRIPTION
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Forward Recovery Voltage
(T_a=25ºC unless specified otherwise) per diode
SYMBOL TEST CONDITION
MIN
V_F
I_F = 1mA
I_F = 10mA
I_F = 100mA
I_F = 150mA
I_R
V_R=25V
V_R=50V
V_R=25V, T_a=150ºC
V_R=50V, T_a=150ºC
C_d
V_R=0V, f=1MHz
When switched from
t_rr
I_F=10mA, to I_R=10mA,
I_R=1mA, R_L=100Ω
V_fr
When switched from
I_F=10mA, to t_r=20ns
MAX
715
855
1.0
1.25
30
0.1
30
100
2.0
4.0
1.75
UNIT
V
V
mA
mA
mA
A
A
A
mW
ºC
ºC
K/W
K/W
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V