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| BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode | |||
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Transys
Electronics
LIMITED
SOT-23 Formed SMD Package
BAV70
SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES
High speed switching diode pair, common cathode
Marking
BAV70 = A4
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = ANODE
2 = ANODE
3 = CATHODE
2
1
3
ABSOLUTE MAXIMUM RATINGS
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
Forward voltage at IF = 50 mA
Reverse recovery time when switched from
IF = 10 mA to IR = 10 mA; RL = 100 â¦
measured at IR = 1 mA
Recovery charge when switched from
IF = 10 mA to VR = 5 V; RL = 100 â¦
VR
VRRM
IFRM
Tj
VF
max.
max.
max.
max.
<
70 V
75 V
450 mA
150 °C
1,0 V
trr
<
4 ns
Qs
<
45 pc
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