 English |
|
|
|
|
|
|
|
| BAS70W Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
| |||
|
BAS70W SERIES SCHOTTKY DIODE
FEATURES
Power dissipation
PD:
200 mW (Tamb=25â)
Collector current
IF:
70 mA
Collector-base voltage
VR:
70 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ Ã0. 05
2. 30¡ Ã0. 05
Unit: mm
BAS70W Marking: K73 BAS70W-04 Marking: K74
BAS70W-05 Marking: K75
BAS70W-06 Marking: K76
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V(BR) R
IR
VF
CD
trr
Test conditions
IR= 10µA
VR=50V
IF=1mA
IF=15mA
VR=0V, f=1MHz
IF=10mA through
IR=10mA to IR=1mA
MIN
MAX
70
100
410
1000
2
5
UNIT
V
nA
mV
pF
nS
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese