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| BAS70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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BAS70-04-05-06 SCHOTTKY DIODE
FEATURES
Power dissipation
PD:
200 mW (Tamb=25â)
Collector current
IF:
200 mA
Collector-base voltage
VR:
70 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-23
2. 4
1. 3
Unit: mm
BAS70 Marking: 73
BAS70-04 Marking: 74
BAS70-05 Marking: 75
BAS70-06 Marking: 76
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
MIN
V(BR) R
IR= 10µA
70
IR
VR=50V
VF
IF=1mA
IF=15mA
CD
VR=0V,f=1MHz
IF=10mA through IR=10mA
trr
to IR=1mA
MAX
100
410
1000
2
5
UNIT
V
nA
mV
pF
nS
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