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| BAS516 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diode | |||
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Transys
Electronics
LIMITED
SOD-523 Plastic-Encapsulated Diodes
BAS516 Switching Diodes
FEATURES
z Small surface mounting type
z High switching speed
Marking: 61
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25â
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
Mean rectifying current
IO
75
V
250
mA
Peak forward surge current
IFSM
0.5
A
Junction temperature
Tj
150
â
Storage temperature
Tstg
-65~+150
â
Electrical Ratings @TA=25â
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
Reverse current
0.715
0.855
VF
V
1
1.25
0.03
IR
µA
1
Capacitance between terminals
CT
1
pF
Reverse recovery time
trr
4
ns
Conditions
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=75V
VR=0, f=1MHZ
IF=10mA, RL=100â¦
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