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| BAS40W Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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BAS40W SERIES SCHOTTKY DIODE
FEATURES
Power dissipation
PD:
200
mW (Tamb=25â)
Collector current
IF:
200
mA
Collector-base voltage
VR:
40
V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-323
1. 25¡ Ã0. 05
2. 30¡ Ã0. 05
Unit: mm
BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V(BR) R
IR
VF
CD
trr
Test conditions
IR= 10µA
VR=30V
IF=1mA
IF=40mA
VR=0V, f=1MHz
IF=10mA through
IR=10mA to IR=1mA
MIN
MAX
40
200
380
1000
5
5
UNIT
V
nA
mV
pF
nS
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