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| BAS40 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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BAS40 SERIES SCHOTTKY DIODE
FEATURES
Power dissipation
PD:
200 mW (Tamb=25â)
Forward Current
IF:
Reverse Voltage
200 m A
VR:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-23
2. 4
1. 3
Unit: mm
BAS40 Marking:43 BAS40-04 Marking:44 BAS40-05 Marking:45 BAS40-06 Marking:46
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Reverse breakdown voltage
V(BR)
IR= 100µA
40
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
IR
VR=30V
VF
IF=1mA
IF=40mA
CD
VR=0V, f=1MHz
t rr
IF =10mA through IR=10mA
to IR=1mA
MAX
100
380
1000
5
5
UNIT
V
nA
mV
pF
nS
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