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| BAS29 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose controlled avalanche double diodes | |||
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Transys
Electronics
LIMITED
SOT-23 BAS29, BAS31, BAS35
SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE
BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.
Marking
BAS29â L20
BAS31 â L21
BAS35 â L22
2
1
BAS29 3
2
1
BAS31
3
2
1
BAS35
3
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
ABSOLUTE MAXIMUM RATINGS (per diode)
Continuous reverse voltage
Repetitive peak forward current
Forward current
Junction temperature
Forward voltage at IF = 50 mA
Reverse recovery time when switched from
IF = 30 mA to IR = 30 mA; RL = 100 â¦;
measured at IR = 3 mA
VR
IFRM
IF
Tj
VF
trr
RATINGS (per diode) (at TA = 25°C unless otherwise specified)
Limiting values
Continuous reverse voltage
Repetitive peak forward current
Repetitive peak reverse current
VR
IFRM
IRRM
max.
max.
max.
max.
<
90 V
600 mA
250 mA
150 °C
0.84 V
<
75 ns
max.
max.
max.
90 V
600 mA
600 mA
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