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| BAS19LT1 Datasheet, PDF (1/1 Pages) ON Semiconductor – High Voltage Switching Diode | |||
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Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulated Diodes
BAS19LT1 SWITCHING DIODE
FEATURES
Power dissipation
PD:
225 mW (Tamb=25â)
Forward Current
IF:
Reverse Voltage
200 m A
VR:
120 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-23
2. 4
1. 3
Unit: mm
Mar ki ng JP
Mar ki ng JP
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
CD
t rr
Test conditions
IR= 100µA
VR=100V
IF=100mA
IF=200mA
VR=0V, f=1MHz
MIN
MAX
120
0.1
1000
1250
5
50
UNIT
V
µA
mV
pF
nS
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