BAS19 Datasheet, PDF (1/3 Pages) NXP Semiconductors – General purpose diodes

Transys
Electronics
LIMITED
SILICON PLANAR HIGH SPEED DIODES
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
1
2
BAS19, BAS20, BAS21
SOT-23
Formed SMD Package
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
High-Speed Switching Diodes in a Microminiature Plastic Envelope.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Continuous Reverse Voltage
V_R
Repetitive Peak Reverse Voltage
V_RRM
Non Repetitive Peak Forward Current
t=1µs
I_FSM
t=1s
I_FSM
Average Rectified Forward Current
(averaged over any 20 ms period)
I_{F (AV)}
Forward Current (DC)
*I_F
Repetitive Peak Forward Current
I_FRM
Total Power Dissipation
P_D
Storage Temperature Range
T_stg
Junction Temperature
T_j
BAS19
100
120
BAS20
150
200
2.5
0.5
200
200
625
250
- 55 to +150
150
BAS21
200
250
UNIT
V
V
A
A
mA
mA
mA
mW
o_C
o_C
Thermal Resistance
Junction to Ambient in free air
R_{th (j-a)}
500
K/W
ELECTRICAL CHARACTERISTICS
DESCRIPTION
Forward Voltage
Reverse Breakdown Voltage
(T_a=25º C unless specified otherwise)
SYMBOL TEST CONDITION
V_F
V_(BR)R
I_F=100mA
I_F=200mA
I_R=100µA
**BAS19
BAS20
***BAS21
MIN TYP MAX
1.00
1.25
120
200
250
UNIT
V
V
V
V
V
*Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm
**Measured under pulse conditions; pulse time = t_p=0.3ms.
***At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V