BAL99 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

Transys
Electronics
LIMITED
SILICON PLANAR SWITCHING DIODE
3
Pin Configuration
1 = NC
2 = ANODE
3 = CATHODE
1
2
BAL99
SOT-23
MARKING- TF
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
Peak Forward Current
Total Device Dissipation FR-5 Board*
Ta=25 deg C
Derate Above=25 deg C
Thermal Resistance Junction to Ambient
VR
IF
PD
Rth(j-a)
70
V
100
mA
225
mW
1.80
mW/deg C
556
deg C/W
Total Device Dissipation
Alumina Substrate,** Ta=25 deg C
Derate Above=25 deg C
Thermal Resistance Junction to Ambient
Junction & Storage Temperature
PD
Rth(j-a)
Tj, Tstg
300
2.40
417
-55 to +150
mW
mW/deg C
deg C/W
deg C
*FR-5=1.0 x 0.75 x 0.062 in.
** Alumina= 0.4 x 0.3 x 0.024 in 99.5% alumina
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise noted)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX UNIT
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Recovery Current
Diode Capacitance
Reverse Recovery Time
Forward Recovery Voltage
IR
VR=70V
-
VR=25V, Tj=150 deg C -
VR=70V, Tj=150 deg C -
V(BR)
IR=100uA
70
VF
IF=1.0mA
-
IF=10mA
-
IF=50mA
-
IF=150mA
-
QS
IF=10mA, VR=5V,
-
RL=500 ohms
CD
VR=0V, f=1MHz
-
trr
IF=IR=10mA,RL=
-
100 ohms measured @
IR=1.0 mA
VFR
IF=10mA, tr=20ns
-
-
2.50
uA
-
30
uA
-
50
uA
-
-
V
-
715
mV
-
855
mV
-
1000
mV
-
1250
mV
-
45
pC
-
1.5
pF
-
6.0
ns
-
1.75
V