B772 Datasheet, PDF (1/1 Pages) Diode Semiconductor Korea – PNP Silicon Epitaxial Planar Transistor

Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
B772 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
1.25 W(Tamb=25℃)
Collector current
I_CM:
-3
A
Collector-base voltage
V_(BR)CBO:
- 40
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-251
TO-252-2
6. 5 0¡ À0. 10
5. 3 0¡ À0. 05
0. 5 1¡ À0 . 03
2 . 30¡ À0. 05
5¡ ã
0. 80¡ À0. 0 5
0. 6 0¡ À0. 0 5
5¡ ã
5¡ ã
1. BASE
2. 3 0¡ À0. 05
2. 3 0¡ À0. 0 5
1 . 20
123
0. 51 ¡ À0 . 03
2. COLLECTOR
6. 50¡ À0. 15
5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
3. EMITTER
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
5¡ ã
5¡ ã
5¡ ã
0. 80¡ À0. 10
2. 30¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
123
0¡¡ ã«9¡ ã
0. 51
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO Ic= -100µA, I_E=0
-40
Collector-emitter breakdown voltage V(BR)CEO Ic= -10mA, IB=0
-30
Emitter-base breakdown voltage
V(BR)EBO I_E= -100µA, I_C=0
-6
Collector cut-off current
ICBO
VCB= -40V, IE=0
Collector cut-off current
ICEO
VCE= -30V, IB=0
Emitter cut-off current
IEBO
VEB= -6V, IC=0
DC current gain
hFE(1)
VCE= -2V, IC= -1A
60
hFE(2)
VCE= -2V, IC= -100mA
32
Collector-emitter saturation voltage
VCE (sat)
IC= -2A, IB= -0.2 A
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC= -2A, IB= -0.2 A
fT
VCE= -5V, Ic=-0.1A
f =10MHz
50
MAX
-1
-10
-1
400
UNIT
V
V
V
µA
µA
µA
-0.5
V
-1.5
V
MHz
CLASSIFICATION OF hFE ₍₁₎
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400