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| 3DD13005 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
3DD13005 TRANSISTOR (NPN)
TO-220
FEATURES
Power dissipation
PCM:
1.5 W (Tamb=25â)
Collector current
ICM:
4A
Collector-base voltage
V(BR)CBO:
700 V
Operating and storage junction temperature range
1. BASE
2. COLLECTOR
3. EMITTER
123
TJ, Tstg: -55â to +150â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 1000µA, IE=0
700
Collector-emitter breakdown voltage V(BR)CEO
Ic= 10mA, IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 1000µA, IC=0
9
Collector cut-off current
ICBO
VCB= 700V, IE=0
Collector cut-off current
ICEO
VCE= 400V, IB=0
Emitter cut-off current
IEBO
VEB=9V, IC=0
DC current gain
hFE
VCE= 5V, IC= 1000mA
10
Collector-emitter saturation voltage
VCE (sat) IC=2000mA, IB=500 mA
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
VBE (sat) IC=2000mA, IB= 500mA
VCE=10 V, IC=500mA
fT
5
f = 1MHz
tf
IB1=-IB2=0.4A, IC=2A
ts
VCC=120V
MAX
1000
100
1000
40
0.6
1.6
0.9
4
UNIT
V
V
V
µA
µA
µA
V
V
MHz
µs
µs
CLASSIFICATION OF hFE
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
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