3DD13001 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO 92 PLASTIC ENCAPSULATE TRANSISTORS

Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
3DD13001
FEATURES
Power dissipation
TRANSISTOR (NPN)
P_CM:
1.2 W (Tamb=25℃)
Collector current
I_CM:
0.2 A
Collector-base voltage
V_(BR)CBO:
600 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-251
1. BASE
2. COLLECTOR
3EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
IC= 1 mA , IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 µA, IC=0
7
Collector cut-off current
ICBO
VCB= 600 V , IE=0
100
Collector cut-off current
ICEO
VCE= 400 V , IB=0
200
Emitter cut-off current
IEBO
VEB= 7 V , IC=0
100
DC current gain
hFE(1)
VCE= 20 V, IC= 20mA
10
40
hFE(2)
VCE= 10V, IC= 0.25 mA
5
Collector-emitter saturation voltage
VCE(sat) IC= 50mA, IB= 10 mA
0.5
Base-emitter saturation voltage
VBE(sat) IC= 50 mA, IB= 10mA
1.2
Base-emitter voltage
Transition frequency
Fall time
Storage time
VBE
IE= 100 mA,
1.1
VCE= 20 V, IC=20mA
fT
8
f = 1MHz
tf
IC=50mA,
0.3
IB1=-IB2=5mA,
tS
1.5
VCC=45V
UNIT
V
V
V
µA
µA
µA
V
V
V
MHz
µs
µs