3DA752 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – TO-251 Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
3DA752 TRANSISTOR (NPN)
TO-251
FEATURES
Power dissipation
P_CM:
1.2 W (Tamb=25℃)
Collector current
I_CM:
Collector-base voltage
2A
V_(BR)CBO:
40 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)1
VCE(sat)2
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
IC=2A, IB=0.2A
IC=1.5A, IB=30mA
VCE=5V, IC=500mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40
V
30
V
5
V
0.1 µA
0.1 µA
100
400
0.8 V
2
V
120
MHz
13
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
O
100-200
Y
160-320
G
200-400