2n4401 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN switching transistor

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N4401
TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM : 0.625 W
Collector current
I_{CM :} 0.6 A
Collector-base voltage
V_(BR)CBO : 60 V
(Tamb=25℃)
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1.EMILTTER
2.BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS ( Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO
Ic=100µA , IE=0
60
V
V(BR)CEO
IC= 1mA , IB=0
40
V
V(BR)EBO
IE=100µA, IC=0
6
V
ICBO
VCB=50 V , IE=0
0.1
µA
ICEO
VCE=35 V , IB=0
0.1
µA
IEBO
VEB=5V , IC=0
0.1
µA
hFE 1
VCE=1 V, IC= 150mA
100
300
VCE(sat)
IC=150 mA, IB=15mA
0.4
V
VBE(sat)
IC= 150 mA, IB=15mA
0.95
V
VCE= 10V, IC= 20mA
fT
250
f = 100MHz
MHz