2SD886 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

Transys
Electronics
LIMITED
TO-126 Plastic-Encapsulated Transistors
2SD886 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1 W (Tamb=25℃)
Collector current
I_CM:
3A
Collector-base voltage
V_(BR)CBO:
50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO—126
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=5mA, IB=0
IE=100µA, IC=0
VCB=50V, IE=0
VEB=3V, IC=0
VCE=2V, IC=20mA
VCE=2V, IC=1A
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=5V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
50
V
5
V
1
µA
1
µA
100
100
400
0.5 V
2
V
80
MHz
45
pF