2SD669 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Transys
Electronics
LIMITED
TO-126C Plastic-Encapsulated Transistors
2SD669 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1 W (Tamb=25℃)
Collector current
I_CM:
1.5 A
Collector-base voltage
V_(BR)CBO: 180 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
VEB=4V, IC=0
VCE=5V, IC=150mA
VCE=5V, IC=500mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
180
V
120
V
5
V
10 µA
10 µA
60
320
30
1
V
1.5 V
140
MHz
14
pF
CLASSIFICATION OF h_FE(1)
Rank
B
Range
60-120
C
100-200
D
160-320