2SD313 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulate Transistors
2SD313 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1.75 W (Tamb=25℃)
Collector current
I_CM:
Collector-base voltage
3A
V_(BR)CBO:
60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VCE=60V, IE=0
VEB=4V, IC=0
VCE=2V, IC=1A
VCE=2V, IC=0.1A
IC=2A, IB=200mA
VCE=2V, IC=1A
VCE=5V, IC=500mA
VCB=10V, IE=0,f=1MHz
MIN TYP MAX UNIT
60
V
60
V
5
V
100 µA
1
mA
100 µA
40
320
40
1
V
1.5 V
8
MHz
65
pF
CLASSIFICATION OF h_FE(1)
Rank
C
Range
40-80
D
60-120
E
100-200
F
160-320