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| 2SD2137 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification) | |||
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Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
2SD2137 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
2 W (Tamb=25â)
Collector current
ICM:
Collector-base voltage
3A
V(BR)CBO:
60 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Turn-on time
Switch time
Storage time
Fall time
Symbol
Test conditions
MIN
V(BR)CBO
Ic=1mA, IE=0
60
V(BR)CEO
Ic=30mA, IB=0
60
V(BR)EBO
IE=1mA, IC=0
6
ICBO
VCB=60V, IE=0
IEBO
VEB=6V, IC=0
hFE(1)
VCE=4V, IC=1A
70
hFE(2)
VCE=4V, IC=3A
10
VCE(sat)
IC=3A, IB=375mA
VBE
VCE=4V, IC=3A
fT
VCE=5V, IC=0.2A, f=10MHz
ton
tstg
VCC=50V, IC=1A, IB1=0.1A, IB2=-0.1A
tf
TYP
30
0.3
2.5
0.2
MAX UNIT
V
V
V
100 µA
100 µA
320
1.2 V
1.8 V
MHz
µs
µs
µs
CLASSIFICATION OF hFE(1)
Rank
Range
Q
70-150
P
120-250
O
160-320
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