2SD2118 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-252-2Plastic-Encapsulated Transistors
2SD2118 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1 W (Tamb=25℃)
Collector current
I_CM:
5A
Collector-base voltage
V_(BR)CBO:
50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-252-2
6. 50¡ À0. 15
5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
5¡ ã
5¡ ã
5¡ ã
1. BASE
2. 30¡ À0. 10
0. 80¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
0¡¡ ã«9¡ ã
0. 51
2. COLLECTOR
123
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
IC=4A, IB=100mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
20
V
6
V
0.5 µA
0.5 µA
120
390
1
V
150
MHz
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Q
120-270
R
180-390