2SD1899 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – TO-252 Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-252 Plastic-Encapsulated Transistors
2SD1899-Z TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
2 W (Tamb=25℃)
Collector current
I_CM:
3A
Collector-base voltage
V_(BR)CBO:
60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-252
1. BASE
2. COLLECTOR
3. EMITTER
1 23
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specifie)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA,IC=0
VCB=60V, IE=0
VEB=7V, IC=0
VCE=2V, IC=200mA
VCE=2V, IC=600mA
VCE=2V, IC=2A
IC=1.5A, IB=150mA
IC=1.5A, IB=150mA
VCE=5V, IC=1.5A
VCB=10V, IE=0, f=1MHz
VCC=30V, IC=1A, IB1=-IB2=-0.05A
MIN
60
60
7
60
100
50
TYP MAX UNIT
V
V
V
10 µA
10 µA
400
0.25 V
1.2 V
120
MHz
30
pF
0.5
2.0
µs
0.5
CLASSIFICATION OF h_FE(1)
Rank
M
Range
100-200
L
160-320
K
200-400