2SD1802 Datasheet, PDF (1/2 Pages) Weitron Technology – NPN PLASTIC ENCAPSULATE TRANSISTORS

Transys
Electronics
LIMITED
TO-251/TO-252-2Plastic-Encapsulated Transistors
2SD1802 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1 W (Tamb=25℃)
Collector current
I_CM:
3A
Collector-base voltage
V_(BR)CBO: 60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-251
TO-252-2
6. 5 0¡ À0. 10
5. 3 0¡ À0. 05
0. 5 1¡ À0 . 03
2 . 30¡ À0. 05
5¡ ã
0. 80¡ À0. 0 5
0. 6 0¡ À0. 0 5
5¡ ã
5¡ ã
1. BASE
2. 3 0¡ À0. 05
2. 3 0¡ À0. 0 5
1 . 20
0. 51 ¡ À0 . 03
2. COLLECTOR
123
3. EMITTER
2. 30¡ À0. 10
6. 50¡ À0. 15
5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
5¡ ã
5¡ ã
5¡ ã
0. 80¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
0¡¡ ã«9¡ ã
0. 51
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE(1)
hFE(2)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Turn-off time
ton
Fall time
tf
Storage time
ts
CLASSIFICATION OF h_FE(1)
Rank
R
Range
100-200
Marking
Test conditions
Ic=10µAµ, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=3A
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=10V, IC=50mA
VCB=10V, IE=0,f=1MHz
Vcc=25V, Ic=1A
IB1=-IB2=0.1A
MIN TYP MAX UNIT
60
V
50
V
6
V
1
µA
1
µA
100
560
35
0.5 V
1.2 V
150
MHz
25
pF
70
650
nS
35
S
140-280
T
200-400
U
280-560