2SC3420 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
TO-126C Plastic-Encapsulated Transistors
2SC3420 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1.5 W (Tamb=25℃)
Collector current
I_CM:
Collector-base voltage
5A
V_(BR)CBO:
50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=10mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VEB=8V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=4A
IC=4A, IB=0.1A
VCE=2V, IC=4A
VCE=2V, IC=0.5A
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
20
V
8
V
0.1 µA
0.1 µA
140
600
70
1
V
1.5 V
100
MHz
40
pF
CLASSIFICATION OF h_FE(1)
Rank
Y
Range
140-240
Marking
GR
200-400
BL
300-600