2SC2073 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,150V,25W)

Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
2SC2073 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
1.5 W (Tamb=25℃)
Collector current
I_CM:
1.5 A
Collector-base voltage
V_(BR)CBO:
150 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=120V, IE=0
VEB=5V, IC=0
VCE=10V, IC=500mA
IC=500mA, IB=50mA
VCE=10V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
150
V
150
V
5
V
10 µA
10 µA
40
140
1.5 V
0.65
0.85 V
4
MHz
35
pF