2SC2001 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC2001 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
Collector current
I_CM:
Collector-base voltage
V_(BR)CBO:
0.6 W (Tamb=25℃)
0.7 A
30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h_FE
Rank
Range
M
90-180
Symbol Test conditions
V(BR)CBO
Ic=100µA , IE=0
V(BR)CEO
IC=10mA , IB=0
V(BR)EBO
IE=100µA, IC=0
ICBO
VCB=30 V , IE=0
ICEO
VCE=20 V , IB=0
IEBO
VEB=5 V , IC=0
hFE
VCE=1V, IC=100mA
VCE(sat)
IC=700mA, IB= 70mA
VBE(sat)
fT
IC= 700mA, IB=70mA
VCE=6V, IC= 10mA
f = 30MHz
MIN MAX UNIT
30
V
25
V
5
V
0.1
µA
0.1
µA
0.1
µA
90
400
0.6
V
1.2
V
50
MHz
L
135-270
K
200-400