2SC1959 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC1959 TRANSISTOR (NPN)
TO-92
FEATURE
Power dissipation
P_CM:
0.5 W (Tamb=25℃)
Collector current
I_CM:
0.5 A
Collector-base voltage
V_(BR)CBO:
35 V
Operating and storage junction temperature range
T_stg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BSAE
123
T_J: 150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
35
Collector-emitter breakdown voltage V(BR)CEO
IC= 1 mA , IB=0
30
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
Collector cut-off current
ICBO
VCB= 35V , IE=0
Emitter cut-off current
IEBO
VEB= 5 V , IC=0
DC current gain
hFE (1)
hFE (2)
VCE=1 V, IC= 100mA
70
VCE=6 V, IC= 400mA
25
Collector-emitter saturation voltage
VCE(sat)
IC= 100 mA, IB= 10 mA
Base-emitter voltage
VBE
VCE= 1V, IC= 100 mA
MAX
0.1
0.1
400
UNIT
V
V
V
µA
µA
0.25
V
1.0
V
Transition frequency
CLASSIFICATION OF h_FE
Rank
Range
hFE (1)
hFE (2)
fT
O
70-140
25(min)
VCE= 12 V, IC= 2mA
200
Y
120-240
40(min)
MHz
GR
200-400