2SC1674 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – TO-92 Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC1674 TRANSISTOR (NPN)
TO-92
FEATURE
Power dissipation
1. EMITTER
P_CM:
0. 25 W (Tamb=25℃)
2. COLLECTOR
Collector current
I_CM:
0.02 A
Collector-base voltage
3. BASE
.
123
V_(BR)CBO:
30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1 mA, IB=0
20
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE= 100µA, IC=0
VCB= 30V, IE=0
4
V
0.1
µA
Emitter cut-off current
IEBO
VEB=3V , IC=0
0.1
µA
DC current gain
hFE
VCE=6 V, IC= 1mA
40
180
Collector-emitter saturation voltage
VCE(sat)
IC=10 mA, IB= 1 mA
0.3
V
Base-emitter voltage
VBE(ON)
VCE=6 V, IC= 1mA
0.72
V
Transition frequency
fT
VCE=6 V, IC= 1mA
400
MHz
Collector output capacitance
Noise figure
Power gain
C_ob
VCE=6V, IE=0, f=1MHz
1.5
pF
NF
VCE=6V, IC=1mA, f=100MHz,
RS=50Ω
5
dB
G_P
VCE=6V,IC=1mA,f=100MHz
18
dB
CLASSIFICATION OF h_FE(1)
Rank
Range
Y
40-80
GR
60-120
BL
90-180