2SC1627A Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (ERIVER STAGE, VOLTAGE AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
2SC1627A TRANSISTOR (NPN)
FEATURE
Power dissipation
P_CM:
0.8 W (Tamb=25℃)
Collector current
I_CM:
0.4 A
Collector-base voltage
V_(BR)CBO: 80 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(on)
Ic= 100µA , IE=0
IC=5mA, IB=0
IE= 100µA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2 V, IC= 50mA
VCE=2 V, IC= 200mA
IC= 200m A, IB= 20mA
VCE= 2V, IC= 5mA
80
80
5
70
40
0.55
Transition frequency
fT
VCE= 10 V, IC= 10mA
80
MAX
0.1
0.1
240
0.4
0.8
UNIT
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE ₍₁₎
Rank
Range
O
70-140
Y
120-240