2SC1623 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulate Transistors
2SC1623 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM: 200 mW (Tamb=25℃)
Collector current
I_CM: 100 mA
Collector-base voltage
V_(BR)CBO: 60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=1mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=10mA
MIN TYP MAX UNIT
60
V
50
V
5
V
0.1 µA
0.1 µA
90
600
0.3 V
1
V
250
MHz
CLASSIFICATION OF h_FE(1)
Rank
L4
Range
90-180
Marking
L4
L5
135-270
L5
L6
200-400
L6
L7
300-600
L7