2SC1383 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Transys
Electronics
LIMITED
TO-92L Plastic-Encapsulate Transistors
2SC1383
2SC1384
FEATURE
Power dissipation
TRANSISTOR (NPN)
P_CM:
1
W (Tamb=25℃)
Collector current
I_CM:
1
A
Collector-base voltage
V_(BR)CBO:
2SC1383: 30 V
2SC1384: 50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC1383
2SC1384
2SC1383
2SC1384
Symbol
V(BR)CBO
Test conditions
Ic= 10µA , IE=0
V(BR)CEO
IC=2mA , IB=0
V(BR)EBO
IE= 10µA, IC=0
ICBO
VCB=20V , IE=0
hFE(1)
VCE=10 V, IC= 500mA
hFE(2)
VCE=5 V, IC= 1A
VCE(sat)
IC= 500m A, IB=50mA
VBE(sat) IC= 500mA , IB= 50mA
MIN
30
50
25
50
5
85
50
Transition frequency
fT
VCE= 10 V, IC= 50mA
100
MAX
UNIT
V
V
V
0.1
µA
340
0.4
V
1.2
V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
Range
Q
85-170
R
120-240
S
170-340