2SC1213 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC1213
TRANSISTOR (NPN)
2SC1213A
FEATURE
Power dissipation
P_CM:
0.4 W (Tamb=25℃)
Collector current
I_CM:
0.5 A
Collector-base voltage
V_(BR)CBO:
2SC1213 : 35 V
2SC1213A : 50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage 2SC1213
2SC1213A
Collector-emitter breakdown voltage 2SC1213
2SC1213A
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Symbol Test conditions
V(BR)CBO
Ic= 10µA , IE=0
V(BR)CEO
IC= 1 mA , IB=0
V(BR)EBO
IE=10µA, IC=0
ICBO
VCB= 20V , IE=0
hFE(1)
VCE=3V, IC= 10mA
hFE(2)
VCE=3V, IC= 500mA
MIN
35
50
35
50
4
60
10
TYP
MAX UNIT
V
V
V
0.5
µA
320
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
IC= 150mA, IB= 15 mA
VCE= 3V, IC= 10 mA
0.2
0.6
V
0.75
V
CLASSIFICATION OF h_FE(1)
Rank
B
Range
60-120
C
100-200
D
160-320