2SC1008 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC1008 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
0.8 W (Tamb=25℃)
Collector current
I_CM:
0.7
A
Collector-base voltage
V_(BR)CBO:
80
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
80
Collector-emitter breakdown voltage V(BR)CEO
IC= 10mA , IB=0
60
Emitter-base breakdown voltage
V(BR)EBO
IE= 10µA, IC=0
8
Collector cut-off current
ICBO
VCB=60 V , IE=0
Emitter cut-off current
IEBO
VEB= 5 V , IC=0
DC current gain
hFE
VCE= 2 V, IC=50mA
40
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA, IB=50 mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB=50mA
Transition frequency
fT
VCE=10V, IC= 50mA
30
TYP
MAX
0.1
0.1
400
0.4
1.1
UNIT
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE
Rank
Range
R
40-80
O
70-140
Y
120-240
G
200-400