2SB985 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Large-Current Driving Applications

Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
2SB985 TRANSISTOR (PNP)
TO-92MOD
FEATURES
Power dissipation
P_CM:
1 W (Tamb=25℃)
Collector current
I_CM:
-3 A
Collector-base voltage
V_(BR)CBO:
-60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-100mA
VCE=-2V, IC=-3A
IC=-2A, IB=-100mA
IC=-2A, IB=-100mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-6
V
-1
µA
-1
µA
100
560
40
-0.7 V
-1.2 V
100
MHz
50
pF
CLASSIFICATION OF h_FE(1)
Rank
R
Range
100-200
S
140-280
T
200-400
U
280-560